An sami ingantaccen ingancin kwayar halitta na 26.6% akan nau'in siliki na P-type.

Heterojunction da aka kafa a amorphous/crystalline silicon (a-Si: H/c-Si) dubawa yana da kaddarorin lantarki na musamman, wanda ya dace da ƙwayoyin hasken rana na silicon heterojunction (SHJ). Haɗuwa da ƙaramin bakin a-Si:H passivation Layer ya sami babban ƙarfin buɗaɗɗen kewayawa (Voc) na 750 mV. Bugu da ƙari, a-Si:H lamba Layer, wanda aka yi tare da ko dai n-type ko p-type, na iya yin crystallize zuwa wani lokaci mai gauraya, yana rage shanyewar parasitic da haɓaka zaɓin mai ɗaukar kaya da ingancin tattarawa.

LONGi Green Energy Technology Co., Ltd.'s Xu Xixiang, Li Zhenguo, da sauransu sun sami 26.6% ingancin SHJ hasken rana a kan nau'in silicon wafers. Marubutan sun yi amfani da dabarun da za a iya magance su ta hanyar amfani da sinadarin nanocrystalline silicon (nc-Si: H) don lambobin sadarwa masu ɗaukar kaya, suna ƙara haɓaka ƙimar P-type SHJ solar cell zuwa 26.56%, don haka kafa sabon ma'auni na aiki don P. - nau'in siliki na hasken rana.

Marubuta suna ba da cikakken tattaunawa game da haɓaka tsarin na'urar da haɓaka aikin hotovoltaic. A ƙarshe, an gudanar da nazarin asarar wutar lantarki don ƙayyade hanyar ci gaba na gaba na P-type SHJ fasahar hasken rana.